Insight AFP

过程控制需要准确性，精度和长期可重复性；CMP工艺控制需要所有这些，同时保持对前，中，后，背部和远端端的现代抛光技术的亚纳米形状的敏感性。Insight AFP的生态表敏感性可确保检测到波兰后残留地形。使用2个图表，长期，探针到探针的可重复性和可重复性，这是要信任过程控制的数据。

用于过程控制的蚀刻深度计量学，简单，批判性，询问；dtmode是答案。DTMODE是Bruker专有自适应扫描模式，被证明具有任何AFM的最低总测量不确定性（TMU）。在<10 s的MAM时间时，DTMODE可以实现HVM蚀刻过程控制所需的深度计量。

测量两次…。切一次。作为过程开发的一部分，计量学比以往任何时候都更为关键。短循环，过程变体和复合物确实需要计量系统具有高度灵活性和适应性，同时保持关键的准确性和精度要求。Insight AFP简单，直观的食谱接口可以通过XML/CAD接口进行过程开发的计量，该界面可以在<5分钟内进行配方写作。

Metrology for CMP process development requires speed, accuracy, precision and all while permitting the flexibility required for robust recipes. The extended range, super-flat scanner has less than 1nm out of plan motion over the entire 105 μm scan range ensuring the highest accuracy metrology of the lowest topographies. Combining the extended range, 105 μm scanner with the Large Area Scanning mode enables metrology for CMP process development from 10s of nm to 300 mm.

The transition to EUV lithography has brought with it a number of new metrology metrics that must be monitored. One of these new metrics is Top Line Roughness (LTR). LTR does correlate with defectivity and yield results for the two resists discussed here. The resist with lower LTR (by 9% on average) develops significantly less line break defects and shows much better yield (Resist B). Therefore, LTR analyses post development may be used for early screenings of new resist formulations and help to forecast pitch- and dose-dependent performance as well as allow for yield predictions. The InSight AFP’s TrueSense™ mode provides the highest resolution AFM image for non-destructive Top Line Roughness EUV process monitoring

对于EUV而言，E-Beam抵抗收缩仍然是一个问题。表征和理解抗emeam暴露的抵抗力如何变化对于开发EUV过程开发的最佳模型至关重要。Insight AFP的Truesense™模式是解决这一挑战的方法。Truesense™依赖于瞬时反馈，从而实现了Pico Newton力控制，从而确保了最高精度，无损的表面分析。测量暴露的区域和未暴露的区域表征了抵抗轮廓的变化。然后将这些附加数据输入到计量套件中，以生成更好的模型，以更快的过程开发。这就要求法新社和SEM测量相同的确切功能。通过通过XML接口和子250NM原始图像放置精度共享配方来启用这一点。