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强调

Long-Term Stability and Productivity for Advanced Process Control and Development

Insight AFPis the world’s highest performance and industry preferred CMP profiling and etch depth metrology system for advanced technology nodes. The combination of itsmodern tip scanner具有固有稳定的电容量表和准确的空气定位系统，可以在模具的活跃区域中进行无损的直接测量。

0.3 nm

long-term stability

Delivers NIST-traceable reference metrology with measured stability over one year

260 - 340 sites/hour

highest productivity for inline applications

减少MAM时间和优化的晶圆处理可保持多达50瓦/小时的吞吐量

最多36,000 µm/sec

profiling speed

提供高分辨率的3D表征，并识别热点

特征

Highest Resolution with Longest Tip Life

Insight AFP's TrueSense® technology, with the proven long-scan capability of an atomic force profiler. Etch depth, dishing, and erosion on submicron features can be monitored fully automated with unsurpassed repeatability without relying on test keys or models. It’s unique

Process

完全自动化的蚀刻和CMP晶圆的内联过程控制

The Insight AFP combines the latest innovations in atomic force microscopy, including Bruker’s proprietary CDMode characterizing sidewall features and roughness. CDmode reduces the amount of required cross-sectioning, realizing significant cost savings. In addtion, AFP data provides a direct side-wall roughness measurement that cannot be obtained through other techniques.

产生改善

Automated Defect Review and Classification

The device killing defects of today's leading ICs are smaller than ever and require rapid resolution for HVM demands. The InSight AFP provides fast, actionable topographical and material information about defects on semiconductor wafers and phtomasks that allows manufacturers to rapidly identify sources of defectivity and eliminate their impact on production.

100倍的高分辨率注册光学元件和AFM全局对齐对图案化的晶片和掩模可实现小于±250 nm的原始图像放置精度，以确保感兴趣的缺陷是测量的缺陷。

The system is fully compatible with KLARITY and most other YMS systems.

R&D

3D模拟和HyperMAP™

After Polish Hot Spot Inspection - Scan Rate: 26 mm/sec; Number of scan lines: 33,000

Profiling speeds up to 36,000 µm/sec enables rapid, full 3D post-CMP characterization and inspection for full 33 mm x 26 mm flash fields and larger. Sub 2 nm out-of-plane motion for true large-scale topography and fully automated post polish hot spot detection.

在此示例中，以1微米x 1微米像素的大小在24小时内获得了完整的标准，26 mm x 33 mm的标线视场扫描。然后，可以使用Bruker的热点检测并审查功能自动检测并恢复热点。

Applications

What is your challenge?

Sub nm Profiling Sensitivity

CMP Advanced Process Control

Process control requires accuracy, precision and long-term reproducibility; CMP process control requires all of these while maintaining sensitivity to the sub nanometer topography of modern polishing technologies for front, mid, back and far-back end-of-line. The InSight AFP's picometer sensitivity ensures detection of post polish residual topography. With 2 picometer, long term, probe-to-probe repeatability and reproducibility, this is data to trust for process control.

高纵横比的深度etrology

Etch Advanced Process Control

Etch depth metrology for process control, a simple, critical, ask; DTMode is the answer. DTMode is a Bruker proprietary adaptive scan mode, proven to have the lowest Total Measurement Uncertainty (TMU) of any AFM for depth metrology. With a < 10 s MAM time, DTMode enables the depth metrology required for HVM Etch process control.

NAND and Power Devices

Etch Process Development

测量两次…。切一次。作为过程开发的一部分，计量学比以往任何时候都更为关键。短循环，过程变体和复合物确实需要计量系统具有高度的灵活性和适应性，同时保持关键的准确性和精度要求。Insight AFP简单，直观的食谱接口可以通过XML/CAD接口进行过程开发，该界面可以在<5分钟内进行配方写作。

逻辑和内存

CMP Process Development

Metrology for CMP process development requires speed, accuracy, precision and all while permitting the flexibility required for robust recipes. The extended range, super-flat scanner has less than 1nm out of plan motion over the entire 105 μm scan range ensuring the highest accuracy metrology of the lowest topographies. Combining the extended range, 105 μm scanner with the Large Area Scanning mode enables metrology for CMP process development from 10s of nm to 300 mm.

New Metrics and New Challenges

Lithography EUV APC

The transition to EUV lithography has brought with it a number of new metrology metrics that must be monitored. One of these new metrics is Top Line Roughness (LTR). LTR does correlate with defectivity and yield results for the two resists discussed here. The resist with lower LTR (by 9% on average) develops significantly less line break defects and shows much better yield (Resist B). Therefore, LTR analyses post development may be used for early screenings of new resist formulations and help to forecast pitch- and dose-dependent performance as well as allow for yield predictions. The InSight AFP’s TrueSense™ mode provides the highest resolution AFM image for non-destructive Top Line Roughness EUV process monitoring

非破坏性杂种计量学

光刻EUV过程开发

E梁抵抗收缩仍然是EUV抵抗的问题。表征和理解抗eam暴露的抵抗力如何变化对于开发EUV过程开发的最佳模型至关重要。Insight AFP的Truesense™模式是解决这一挑战的方法。Truesense™依赖于瞬时反馈，从而实现了Pico Newton力控制，从而确保了最高精度，无损的表面分析。测量暴露的区域和未暴露的区域表征了抵抗轮廓的变化。然后将这些附加数据馈送到计量套件中，以生成更好的模型，以更快地开发。这要求法新社和SEM测量相同的确切功能。通过通过XML接口和子250NM原始图像放置精度共享配方来启用这一点。

支持

How Can We Help?

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