Automated AFM Metrology

InSight AFP

第五代法新社具有行业最高分辨率,最快的分析和快速3D模拟映射

Inline Metrology

Preferred Choice of Leading Foundries and Memory Makers

InSight AFP

Основные моменты

Long-Term Stability and Productivity for Advanced Process Control and Development

InSight AFP is the world’s highest performance and industry preferred CMP profiling and etch depth metrology system for advanced technology nodes. The combination of itsmodern tip scannerwith inherently stable capacitive gauges and an accurate air-bearing positioning system enables non-destructive, direct measurements in the active area of dies.

0.3 nm
long-term stability
Delivers NIST-traceable reference metrology with measured stability over one year
260 - 340 sites/hour
highest productivity for inline applications
减少MAM时间和优化的晶圆处理可保持多达50瓦/小时的吞吐量
Up to 36,000 µm/sec
profiling speed
Provides high-resolution 3D characterization with hot-spot identification

Особенности

Features

Highest Resolution with Longest Tip Life

Insight AFP的Truesense®技术,具有原子力学师的经过验证的长扫描能力。可以在不依赖测试键或型号的情况下,以无与伦比的可重复性进行完全自动化的亚微米特征上的蚀刻深度,盘旋和侵蚀。这是独一无二的

Process

Fully-Automated, Inline Process Control for Etch and CMP Wafers

The Insight AFP combines the latest innovations in atomic force microscopy, including Bruker’s proprietary CDMode characterizing sidewall features and roughness. CDmode reduces the amount of required cross-sectioning, realizing significant cost savings. In addtion, AFP data provides a direct side-wall roughness measurement that cannot be obtained through other techniques.

Yield Improvement

Automated Defect Review and Classification

The device killing defects of today's leading ICs are smaller than ever and require rapid resolution for HVM demands. The InSight AFP provides fast, actionable topographical and material information about defects on semiconductor wafers and phtomasks that allows manufacturers to rapidly identify sources of defectivity and eliminate their impact on production.

100倍的高分辨率注册光学元件和AFM全局对齐对图案化的晶片和掩模可实现小于±250 nm的原始图像放置精度,以确保感兴趣的缺陷是测量的缺陷。

The system is fully compatible with KLARITY and most other YMS systems.

R&D

3D模拟和HyperMAP™

波兰热点检查后 - 扫描速率:26毫米/秒;扫描线数:33,000

Profiling speeds up to 36,000 µm/sec enables rapid, full 3D post-CMP characterization and inspection for full 33 mm x 26 mm flash fields and larger. Sub 2 nm out-of-plane motion for true large-scale topography and fully automated post polish hot spot detection.

在此示例中,以1微米x 1微米像素的大小在24小时内获得了完整的标准,26 mm x 33 mm的标线视场扫描。然后,可以使用Bruker的热点检测并审查功能自动检测并恢复热点。

Применения

Applications

What is your challenge?

Sub nm Profiling Sensitivity

CMP Advanced Process Control

过程控制需要准确性,精度和长期可重复性;CMP工艺控制需要所有这些,同时保持对前,中,背部,后背和远端端的现代抛光技术的亚纳米形状的敏感性。Insight AFP的生态表敏感性可确保检测到后波兰残留地形。使用2个图表,长期,探针到探针的可重复性和可重复性,这是要信任过程控制的数据。
High Aspect Ratio Depth Metrology

Etch Advanced Process Control

用于过程控制的蚀刻深度计量学,简单,关键,问;dtmode是答案。DTMODE是Bruker专有自适应扫描模式,被证明具有任何AFM的最低总测量不确定性(TMU)。在<10 s的MAM时间时,DTMODE可以实现HVM蚀刻过程控制所需的深度计量。
NAND and Power Devices

Etch Process Development

Measure twice…. cut once. Metrology as part of process development is more critical than ever. Short loops, process variants and complex DOEs require metrology systems to be highly flexible and adaptable while maintaining the critical accuracy and precision requirements. The InSight AFP’s simple, intuitive recipe interface enables metrology for process development through an XML/CAD interface that enables recipe writing in < 5 min.
逻辑和内存

CMP Process Development

Metrology for CMP process development requires speed, accuracy, precision and all while permitting the flexibility required for robust recipes. The extended range, super-flat scanner has less than 1nm out of plan motion over the entire 105 μm scan range ensuring the highest accuracy metrology of the lowest topographies. Combining the extended range, 105 μm scanner with the Large Area Scanning mode enables metrology for CMP process development from 10s of nm to 300 mm.
新指标和新挑战

Lithography EUV APC

The transition to EUV lithography has brought with it a number of new metrology metrics that must be monitored. One of these new metrics is Top Line Roughness (LTR). LTR does correlate with defectivity and yield results for the two resists discussed here. The resist with lower LTR (by 9% on average) develops significantly less line break defects and shows much better yield (Resist B). Therefore, LTR analyses post development may be used for early screenings of new resist formulations and help to forecast pitch- and dose-dependent performance as well as allow for yield predictions. The InSight AFP’s TrueSense™ mode provides the highest resolution AFM image for non-destructive Top Line Roughness EUV process monitoring
非破坏性杂种计量学

Lithography EUV Process Development

f电子束抵抗收缩仍然是一个问题or EUV resists. Characterizing and understanding how the resist profile changes with ebeam exposure is critical for developing the best models for EUV process development. The InSight AFP’s TrueSense™ mode is the solution to this challenge. TrueSense™ relies on instantaneous feedback enabling pico Newton force control ensuring the highest accuracy, non-destructive surface profiling. Measuring those areas that are exposed and areas that are not exposed characterizes the resist profile change. This additional data is then fed into the metrology kit to generate better models for faster process development. This requires that the AFP and the SEM are measuring the same exact features. This is enabled by sharing recipes through the XML interface and sub 250nm raw image placement accuracy.

Поддержка

Support

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